Ceramic Microelectronic Devices and Methods of their Manufacture

ABSTRACT

Microelectronics having form factors (e.g., dimensions and functionality) comparable with traditional microelectronics, but with considerably simplified design, and their methods of manufacture are provided. Microelectronics and methods that implement microelectronics are capable of being forming without the need for through-vias. Exemplary dielectrics in these embodiments include, but are not limited to, high Q, temperature stable and high k dielectrics. Microelectronics and methods are capable of combination with any other passive electronic component such as a resistor or inductor further improving functionality and reducing space requirements on the circuit. Microelectronics and methods are configured to be mounted to a short block or other device without the use of a through-via, simplifying connection to a circuit.

The current application claims the benefit of and priority under 35U.S.C. § 119 (e) to U.S. Provisional Patent Application No. 62/867,786entitled “Ceramic Microelectronic Devices and Methods of TheirManufacture” filed Jun. 27, 2019. The disclosure of U.S. ProvisionalPatent Application No. 62/867,786 is hereby incorporated by reference inits entirety for all purposes.

FIELD OF THE INVENTION

The current application is related to ceramic microelectronic devicesand methods of their manufacture.

BACKGROUND OF THE INVENTION

Microelectronics is a subfield of electronics, and relates to the studyand manufacture (or microfabrication) of very small electronic designsand components. Usually, but not always, these devices can containfeatures of micrometer-scale or smaller. Ceramic microelectronics aremicroelectronic devices where the support structure and some of theactive components are formed from ceramic or glass materials. Co-firedceramic devices are monolithic, ceramic microelectronic devices wherethe entire ceramic support structure and any conductive, resistive, anddielectric materials are fired in a kiln at the same time. Typicaldevices include capacitors, inductors, resistors, transformers, andhybrid circuits. The technology is also used for robust assembly andpackaging of electronic components multi-layer packaging in theelectronics industry, such as military electronics, MEMS, microprocessorand RF applications.

SUMMARY OF THE INVENTION

Apparatus and methods in accordance with various embodiments of theinvention are directed to ceramic microelectronic devices and theirmethod of manufacture. Many embodiments are directed to ceramicmicroelectronic devices have at least one continuous electrode betweenat least two layers of ceramic dielectric.

Still any embodiments include a continuous electrode without usingconductive paste and/or via in the devices to form a circuit.

Yet many embodiments are directed to microelectronic devices formed withcontinuous electrode including (but not limited to): capacitor,resistor, inductor, transformer, diodes.

Still yet many embodiments are directed to ceramic microelectronicdevices without vias.

Yet still many embodiments connect ceramic microelectronic devices withan external circuit including (but not limited to): wire bonding, solderattachment, and die bonding.

Still yet many embodiments eliminate the via-fill process simplifyingthe manufacturing process and eliminating a number of steps from themanufacturing method.

One embodiment of the invention includes a microelectronic devicecomprising a dielectric body; at least a first conductive layer havingat least a first portion embedded within the dielectric body andextending across at least a portion of the dielectric body along a firstplane within the dielectric body such a portion of the dielectricmaterial forming the dielectric body covers said first portion, and asecond portion continuously interconnected with the first portion, thesecond portion is in a second plane parallel to the first plane, wherethe second portion is either exposed to a top surface of the dielectricbody or embedded within the dielectric body.

In a further embodiment, the microelectronic device further comprises atleast a second conductive layer on the top surface of the dielectricbody parallel to the first plane of the first conductive layer, suchthat a layer of dielectric material is disposed therebetween and definesa dielectric thickness.

In another embodiment, the microelectronic device further comprises atleast a second conductive layer having at least a first portion embeddedwithin the dielectric body and extending across at least a portion ofthe dielectric body along a first plane within the dielectric body sucha portion of the dielectric material forming the dielectric body coverssaid first portion, and a second portion continuously interconnectedwith the first portion, the second portion being exposed to the topsurface of the dielectric body in a second plane parallel to the firstplane, where the first planes of the first conductive layer and secondconductive layer are disposed parallel to each other within thedielectric body such that a layer of dielectric material is disposedtherebetween and defines a dielectric thickness.

In a yet further embodiment, the microelectronic device furthercomprises at least an electronic component on the top surface of thedielectric body, connecting with the microelectronic device with thesecond portion of the first conductive layer and the second portion ofthe second conductive layer.

A still further embodiment also includes the microelectronic devicefurther comprising at least a third conductive layer on the top surfaceof the dielectric body parallel to the first portion of the firstconductive layer and the first portion of the second conductive layer,where the third conductive layer overlaps with the second portion of thefirst conductive layer such that a layer of dielectric material isdisposed between the first portions of the first conductive layer andthe second conductive layer and define a first dielectric thickness, anda layer of dielectric material is disposed between the first portion ofthe second conductive layer and the third conductive layer and define asecond dielectric thickness.

In still another embodiment, the microelectronic device furthercomprises a conductive paste deposited at a left side and a right sideof the microelectronic device, where the conductive paste overlapspartially with the top surface and a bottom surface of the dielectricbody, where the bottom surface is opposite to the top surface.

In a yet further embodiment, the microelectronic device furthercomprises at least a third conductive layer embedded within thedielectric body and extending along a first plane within the dielectricbody and parallel to the first portion of the first conductive layer; atleast a fourth conductive layer embedded within the dielectric body andextending along a first plane within the dielectric body and parallel tothe first portion of the first conductive layer, where the third and thefourth conductive layers are disposed parallel to each other within thedielectric body such that a layer of dielectric material is disposedtherebetween and defines a dielectric thickness; and wherein theconductive layers are connected by the conductive paste.

In a further embodiment again, the microelectronic device furthercomprises at least a third conductive layer having at least a firstportion embedded within the dielectric body and extending across atleast a portion of the dielectric body along a first plane within thedielectric body such a portion of the dielectric material forming thedielectric body covers said first portion, and a second portioncontinuously interconnected with the first portion, the second portionbeing exposed to a bottom surface of the dielectric body in a secondplane parallel to the first plane, where the bottom surface is oppositeto the top surface; and at least a fourth conductive layer on the bottomsurface of the dielectric body parallel to the first plane of the thirdconductive layer, such that a layer of dielectric material is disposedtherebetween and defines a dielectric thickness.

In another embodiment again, the microelectronic device furthercomprises at least a third conductive layer having at least a firstportion embedded within the dielectric body and extending across atleast a portion of the dielectric body along a first plane within thedielectric body such a portion of the dielectric material forming thedielectric body covers said first portion, and a second portioncontinuously interconnected with the first portion, the second portionbeing exposed to a bottom surface of the dielectric body in a secondplane parallel to the first plane, wherein the bottom surface isopposite to the top surface; at least a fourth conductive layer havingat least a first portion embedded within the dielectric body andextending across at least a portion of the dielectric body along a firstplane within the dielectric body such a portion of the dielectricmaterial forming the dielectric body covers said first portion, and asecond portion continuously interconnected with the first portion, thesecond portion being exposed to the bottom surface of the dielectricbody in a second plane parallel to the first plane, where the firstplanes of the third conductive layer and fourth conductive layer aredisposed parallel to each other within the dielectric body such that alayer of dielectric material is disposed therebetween and defines adielectric thickness.

In a further additional embodiment, the microelectronic device furthercomprises at least a second conductive layer having at least a firstportion embedded within the dielectric body and extending across atleast a portion of the dielectric body along a first plane within thedielectric body such a portion of the dielectric material forming thedielectric body covers said first portion, and a second portioncontinuously interconnected with the first portion, the second portionbeing exposed to a bottom surface of the dielectric body in a secondplane parallel to the first plane, and a third portion continuouslyinterconnected with the first portion and embedded within the dielectricbody and extending across at least a portion of the dielectric bodyalong a third plane within the dielectric body such a portion of thedielectric material forming the dielectric body covers said the thirdportion, wherein the bottom surface is opposite to the top surface,where the first portion of the first conductive layer and the thirdportion of the second conductive layer are disposed parallel to eachother within the dielectric body such that a layer of dielectricmaterial is disposed between the first portion of the first conductivelayer and third portion of the second conductive layer and defines afirst dielectric thickness, and the first and third portions of thesecond conductive layer are disposed parallel to each other within thedielectric body such that a layer of dielectric material is disposedbetween the first and third portions of the second conductive layer anddefines a second dielectric thickness.

In another additional embodiment, the microelectronic device furthercomprises at least a third portion of the first conductive layercontinuously interconnected with the first portion and embedded withinthe dielectric body and extending across at least a portion of thedielectric body along a third plane within the dielectric body such aportion of the dielectric material forming the dielectric body coverssaid the third portion; at least a second conductive layer having atleast a first portion embedded within the dielectric body and extendingacross at least a portion of the dielectric body along a first planewithin the dielectric body such a portion of the dielectric materialforming the dielectric body covers said first portion, and a secondportion continuously interconnected with the first portion, the secondportion being exposed to a bottom surface of the dielectric body in asecond plane parallel to the first plane, and a third portioncontinuously interconnected with the first portion and embedded withinthe dielectric body and extending across at least a portion of thedielectric body along a third plane within the dielectric body such aportion of the dielectric material forming the dielectric body coverssaid the third portion, wherein the bottom surface is opposite to thetop surface, where the first and third portions of the first conductivelayer are disposed parallel to each other within the dielectric bodysuch that a layer of dielectric material is disposed between the firstand third portions of the first conductive layer and defines a firstdielectric thickness, and the first and third portions of the secondconductive layer are disposed parallel to each other within thedielectric body such that a layer of dielectric material is disposedbetween the first and third portions of the second conductive layer anddefines a second dielectric thickness, and the third portions of thefirst conductive layer and the second conductive layer are disposedparallel to each other within the dielectric body such that a layer ofdielectric material is disposed between the third portions of the firstconductive layer and the second conductive layer and defines a thirddielectric thickness.

In a still yet further embodiment, the microelectronic device furthercomprises at least a third portion of the first conductive layercontinuously interconnected with the first portion, the third portionbeing exposed to the top surface of the dielectric body in the secondplane.

In still yet another embodiment, the microelectronic device furthercomprises at least a second conductive layer on the top surface of thedielectric body, such that the second and third portions of the firstconductive layer and the second conductive layer are on the same topsurface, where an electronic component is deposited on the top surfaceof the dielectric body and connected with the third portion of the firstconductive layer and the second conductive layer.

In a still further embodiment again, the electronic component is aninductor.

In still another embodiment again, the microelectronic device furthercomprises at least a second and a third conductive layer on the topsurface of the dielectric body, such that the second and third portionsof the first conductive layer and the second and third conductive layersare on the same top surface, where an electronic component is depositedon the top surface of the dielectric body and connected with the secondand third conductive layers.

In a still further additional embodiment, the microelectronic devicefurther comprises at least a third conductive layer on the top surfaceof the dielectric body, such that the second portions of the first andthe second conductive layers and the third conductive layer are on thesame top surface, where an electronic component is deposited on the topsurface of the dielectric body and connected with the second portion ofthe first conductive layer and the third conductive layer.

In a still yet further embodiment, the second portions of the first andsecond conductive layers are independently wire-bonded to a portion of acircuit.

In yet another embodiment, at least the dielectric body is formed of amaterial selected from the group consisting of P100, NPO, X7R and Y5Vdielectric materials.

Still another additional embodiment includes a method of manufacturing amicroelectronic device: casting a sheet of a dielectric substrate havingfirst and second surfaces; forming openings in the dielectric substrate;applying a plurality of conductive layers to the sheets of thedielectric substrate; aligning the sheets of the dielectric substratesuch that at least a first conductive layer has at least a first portionembedded within the dielectric material and extending across at least aportion of the dielectric body along a first plane within the dielectricbody such a portion of the dielectric material forming the dielectricbody covers said first portion, and a second portion continuouslyinterconnected with the first portion, the second portion is in a secondplane parallel to the first plane, wherein the second portion is eitherexposed to a top surface of the dielectric body or embedded within thedielectric body; laminating the aligned sheets together; dicing thesheets into singulated devices; and sintering the devices.

In a yet further embodiment again includes firing may comprise one ofeither curing or firing.

Yet another embodiment again also includes firing is performed prior todicing.

Additional embodiments and features are set forth in part in thedescription that follows, and in part will become apparent to thoseskilled in the art upon examination of the specification or may belearned by the practice of the disclosed subject matter. A furtherunderstanding of the nature and advantages of the present disclosure maybe realized by reference to the remaining portions of the specificationand the drawings, which forms a part of this disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features and advantages of the present invention will bebetter understood by reference to the following detailed descriptionwhen considered in conjunction with the accompanying data and figures,wherein:

FIG. 1 provides a schematic of ceramic microelectronic devices with avia in accordance with the prior art.

FIG. 2 provides a schematic of stencil printing traditional vias inceramic microelectronic devices in accordance with the prior art.

FIG. 3 provides a schematic diagram of a ceramic microelectronic devicein accordance with certain embodiments.

FIG. 4 provides a flow-chart of a method of manufacturing ceramicmicroelectronic devices in accordance with certain embodiments.

FIG. 5 provides a schematic of a method of manufacturing ceramicmicroelectronic devices in accordance with certain embodiments.

FIG. 6 provides a schematic of dicing ceramic microelectronic devices inaccordance with certain embodiments.

FIG. 7 provides schematics diagram of a capacitor with one bentelectrode formed in ceramic microelectronic devices in accordance withcertain embodiments.

FIG. 8 provides schematics diagram of a capacitor with two bentelectrodes formed in ceramic microelectronic devices in accordance withcertain embodiments.

FIG. 9 provides schematics diagram of a capacitor with an additionalelectrical component formed in ceramic microelectronic devices inaccordance with certain embodiments.

FIG. 10 provides schematics diagram of a more complex capacitor withbent electrodes formed in ceramic microelectronic devices in accordancewith certain embodiments.

FIG. 11 provides schematics diagram of a ceramic microelectronic devicewith end termination incorporating a single capacitor and a multilayercapacitor in accordance with certain embodiments.

FIG. 12 provides schematics diagram of ceramic microelectronic deviceswith the top surface and the bottom surface containing bent electrodesin accordance with certain embodiments.

FIG. 13 provides schematics diagram of a capacitor with bent electrodeson opposing faces of ceramic microelectronic devices in accordance withcertain embodiments.

FIG. 14 provides schematics diagram of a capacitor with bent electrodeswith multiple bends on opposing faces of ceramic microelectronic devicesin accordance with certain embodiments.

FIG. 15 provides a schematic diagram of a ceramic microelectronic devicewith an electrode that bends inside the ceramic body and back again tothe top surface creating a tunnel bypassing a component on the topsurface of the device in accordance with certain embodiments.

FIG. 16 provides a schematic diagram of a ceramic microelectronic deviceincorporating an inductor in accordance with certain embodiments.

FIG. 17 provides a schematic diagram of a ceramic microelectronic deviceincorporating an inductor and a capacitor in accordance with certainembodiments.

FIG. 18 provides a schematic diagram of a ceramic microelectronic devicewith end termination incorporating an inductor and a capacitor inaccordance with certain embodiments.

FIGS. 19A-19B provide schematics diagrams of end termination in aninductor (19A) and castellation (19B) in ceramic microelectronic devicesin accordance with certain embodiments.

FIG. 20 provides a schematic diagram of a ceramic microelectronic deviceincorporating an inductor with end termination and a multilayercapacitor in accordance with certain embodiments.

FIG. 21 provides a schematic diagram of a ceramic microelectronic devicewith a continuous conductor with two bent electrodes to bypass anelectrical component in accordance with certain embodiments.

FIG. 22 provides a schematic diagram of a ceramic microelectronic devicewith a continuous conductor with two bent electrodes to bypass anelectrical component and connect with another electrical component inaccordance with certain embodiments.

FIG. 23 provides a schematic diagram of a ceramic microelectronic devicewith an electrical component and a decoupling capacitor in accordancewith certain embodiments.

FIGS. 24A-24B provide schematics diagrams of interconnection ofmicroelectronic devices to circuits in accordance with certainembodiments.

DETAILED DISCLOSURE

The embodiments of the invention described herein are not intended to beexhaustive or to limit the invention to precise forms disclosed. Rather,the embodiments selected for description have been chosen to enable oneskilled in the art to practice the invention.

Turning now to the drawings, microelectronics having form factors (e.g.,dimensions and functionality) comparable with traditionalmicroelectronics, but with considerably simplified design, and theirmethods of manufacture are provided. Many embodiments of the currentinvention provide microelectronics and methods that implement at leastone continuous electrode between at least two layers of pre-firedceramic sheets with dielectric properties. In some embodiments, at leastone continuous electrode forms a conductive pad on a first plane and anembedded electrode on a second plane that is parallel to the firstplane. The continuous electrode forms a bent structure connecting twoparallel planes in accordance to several embodiments. Many embodimentsof the current invention provide microelectronics and methods thatimplement microelectronics capable of being forming without the need forthrough-vias.

Many embodiments include more than one continuous electrode in variousconfigurations to form a number of microelectronic devices. Continuouselectrodes in such embodiments can form electronic components within themicroelectronic devices. Examples of microelectronic devices formed withcontinuous electrodes according to embodiments include (but are notlimited to): capacitors, resistors, inductors, transformers, diodes.Electronic components in such embodiments can be connected in series, inparallel, or any combination of. Exemplary ceramic dielectrics in theseembodiments include, but are not limited to, high Q, temperature stableand high k dielectrics. Many embodiments of the current inventionprovide microelectronics and methods that implement the integration ofmultiple dielectric types in a single device producing high frequencyperformance characteristics. Exemplary dielectric materials in theseembodiments include, but are not limited to, P100, NPO, X7R, Y5V. Manyembodiments provide microelectronics and methods that implement at leastone thin single layer capacitor interconnected to a Low TemperatureCo-Fired Ceramic (LTCC) substrate. In a number of embodiments,capacitors and methods described below allow for devices to be producedwith much higher capacitance.

In many embodiments, continuous electrodes in ceramic microelectronicdevices can be assembled from a number of ceramic sheets. Some ceramicsheets used to make ceramic microelectronic devices in accordance withsome embodiments do not have metalization or openings. Some ceramicsheets in several embodiments are cast, blanked, punched open, andmetalized with a metal conductor on the surface. In some embodiments,ceramic sheets can be ceramic materials that have not been fired.Examples of ceramic sheets include (but are not limited to): Ferro A6M.In several embodiments, conductor pastes that are compatible to thedielectric material can be used for metalization process. Examples ofcompatible conductor to Ferro A6M include (but are not limited to):Ferro CN30-080M gold paste. In a number of embodiments, ceramic sheets,with and without metalization, are aligned and laminated. In manyembodiments sufficient lamination pressure can be applied to form adevice with flat top and bottom surfaces. In some embodiments,lamination is under isostatic pressure. In several embodiments,sintering can include firing process but may also include curing. Themetal conductor is slightly deformed due to the plastic nature of theceramic sheet. This allows a continuous electrode to connect the outsideof the device to an internal layer within the ceramic componentobviating the need for a via in accordance with various embodiments. Insome embodiments the continuous electrode may connect two layers withinthe device obviating the need for a buried via.

In several embodiments, the dielectric sheets and metal electrodes canbe fabricated with screen printing and/or digital printing techniques.Some embodiments describe that the dielectric substrates can be screenprinted. A number of embodiments include screen printing the metalelectrodes. In some embodiments, 3D printing processes can be used tofabricate the dielectric substrates and electrodes.

Various embodiments include continuous electrodes that can bend atdifferent angles, which makes it possible to fabricate more complexelectronic components within the microelectronic devices. In someembodiments, a conductive material can be applied to the side ofmicroelectronic devices to allow other internal electronic components orelectrodes to connect with the bent electrodes. The side termination mayallow more flexibility in mounting the device to an external circuit inembodiments. In many embodiments continuous electrodes can be formed onboth sides of ceramic microelectronic devices. Being able to make bentelectrodes on both sides of the device can negate the need to orient thedevice and provide redundant circuitry and/or add an additionalelectronic component to the same device. Some embodiments implementcontinuous electrodes with multiple bends that can penetrate deeper intothe dielectric device. In various embodiments, continuous electrodes areable to bend inside ceramic body and back to the surface to create atunnel bypassing a component on the surface of the microelectronicdevice. The component can be a spiral inductor in certain embodiments.

Many embodiments of the current invention provide microelectronics andmethods capable of combination with any other passive electroniccomponent such as a resistor or inductor further improving functionalityand reducing space requirements on the circuit. Several embodimentsprovide microelectronics and methods configured to be mounted to a shortblock or other device without the use of a through-via, simplifyingconnection to a circuit. In several embodiments, ceramic microelectronicdevices with continuous electrodes can be connected with at least oneexternal component. The external component can be any electronic circuitcomponent. Examples of external components include (but are not limitedto): capacitors, resistors, inductors, transformers, diodes,transistors, conductors, and ground-planes. In several embodiments,microelectronic devices can be wire bonded, solder attached and/or diebonded to connect to outside circuits. The continuous electrodes mayeliminate the risk of electrical failure due to poor connection of viato electrode. Elimination of the via can reduce the complexity and costof manufacturing ceramic microelectronic devices in accordance tovarious embodiments.

These and other embodiments and methods described below allow forceramic microelectronic devices to be made smaller, ultimately savingspace on the circuit and allowing miniaturization or the ability to addredundant circuits in the same space for high reliability applications.

Microelectronic Devices

Co-fired ceramic devices are fabricated using a multilayer approach. Thestarting material is composite green tapes, consisting of ceramicparticles mixed with polymer binders. Green tapes refer to ceramicmaterials that have not been fired. The tapes are flexible and can bemachined, for example using cutting, milling, punching and embossing.Metal structures can be added to the layers, commonly using via fillingand screen printing. Individual tapes are then bonded together in alamination procedure before the devices are fired in a kiln, where thepolymer part of the tape is combusted and the ceramic particles sintertogether, forming a hard and dense ceramic component.

Co-firing can be divided into low temperature (LTCC) and hightemperature (HTCC) applications: low temperature means that thesintering temperature can be below 1000° C. (1830° F.), while hightemperature is around 1600° C. (2910° F.). The lower sinteringtemperature for LTCC materials is made possible through the addition ofa glassy phase to the ceramic, which lowers its melting temperature.

Due to a multilayer approach based on glass-ceramics sheets thistechnology offers the possibility to integrate into the LTCC bodypassive electrical components and conductor lines typically manufacturedin thick film technology. This differs from semiconductor devicefabrication where layers are processed serially and each new layer isfabricated on top of previous layers.

Blind and buried vias are used to connect between layers of a ceramicmulti-layer circuit where space is at a premium. A Blind Via connects anouter layer to one or more inner layers but does not go through theentire board. A Buried Via connects two or more inner layers but doesnot go through to an outer layer.

Many ceramic microelectronic devices are fabricated using a multi-layerapproach. This includes devices such as conductors, capacitors,inductors, resistors, transformers and hybrid circuits as well aspackaging of devices for medical, military, MEMS, microprocessor,microwave and RF applications. Many of these devices can be fabricatedas stand-alone components or combined to form a monolithic circuit.Conventionally such the devices are built-up in layers using ceramicsheets with specific dielectric properties. The individual sheets arepatterned using pastes of varying conductive properties. The sheets arestacked together, the different layers of conductive pastes connectedusing vias to form an electrical circuit or device. Exemplary processsteps for creating such a device may include the following:

-   -   Ceramic sheet blanking    -   Via punching    -   Via forming        -   Via fill        -   Compress via        -   Dry filled via tape    -   Conductor printing    -   Layer alignment and lamination    -   Sintering    -   Dicing into individual device/circuit

Forming and filling of via holes requires a number of steps in itself.There are also a number of potential issues associated with the use ofvia in these devices including poor connection to buried conductivelayers, which can lead to device failure and variations in surfacetopography associated with the shrinking of the vial fill material.Variations in surface topography may affect the ability to connect thedevice to an external circuit using wire bond, solder, or other attachtechniques. Variations in surface topography may also affect theintegrity of additional thin-film layers or thick-film layers such asconductors or resistors.

An example of a simple ceramic capacitor manufactured using viatechnology is shown schematically in FIG. 1. An external pad (2) isconnected to a conductor or other component (3) contained within aceramic body (1) using a via (4). This type of component would typicallybe built up in layers with internal conductor (3) and external pad (2)being screen printed on ceramic tape. Further sheets of ceramic tape arepunched with a via hole. The via hole is then filled (4) using a stencilprint process. The sheets are aligned, tacked together, laminated andfired to produce a monolithic ceramic component. This system requiresmultiple screens and printing processes to produce a simple electricalconnection between horizontal layers in a microelectronic ceramiccomponent. The ability to fully fill the via during stencil print andshrinkage of the via material during sintering processes can lead tovoids within the via itself and possible connection issues between via(4) and the external pad (2) and internal conductor (3). These can leadto reliability issues and performance issues with the device oftenexacerbated under higher voltages and frequencies. These types ofdevices are often wire-bonded to an external circuit which requires aflat surface to make a reliable connection. The shrinking vias oftenleave “craters” on the top surface of conductive pad (2) which can makewire-bonding difficult.

An example of a stencil printing process to make vias in amicroelectronic device is shown schematically in FIG. 2. A green ceramicsheet containing punched via holes (11) is placed on a substrate (12).Substrate (12) is often constructed of porous material and vacuumapplied to the substrate to both secure ceramic sheet (11) and aid infilling of vias. A metal stencil (14) with openings corresponding to thevia holes in the ceramic tape (11) is carefully aligned with the ceramicsheet. A conductive paste (13) is pushed across the stencil by asqueegee (15) leaving a filled via (16) behind. There are a number oftechnical difficulties with this process that require careful attention.Often via holes are left with incomplete filling or are over filled withpaste and require a flattening step. It is also difficult to correctlyfill vias on extremely thin ceramic sheets as these must be backed by aPET film for stability. Removal of this film at the stacking stage canremove the via fill material or leave material proud of the via hole.

Embodiments of Microelectronic Devices

Apparatus in accordance with various embodiments of the invention relyupon continuous electrodes that can connect the outside ofmicroelectronic devices to at least an internal layer within the ceramicbody of the device. As is discussed further below, any of a variety ofelectrode structure can be utilized as appropriate to the requirementsof specific applications in accordance with various embodiments of theinvention.

Many embodiments are directed to microelectronics devices where the viais replaced by a novel electrode structure. In various embodiments,microelectronics have at least one continuous electrode between at leasttwo layers of pre-fired ceramic dielectrics. The at least one continuouselectrode can form a conductive pad on a first plane and an embeddedelectrode on a second plane that is parallel to the first plane inaccordance to several embodiments. The continuous electrode can form abent structure connecting two parallel planes, forging a connection withthe outside of the device to an internal layer within the ceramiccomponent obviating the need for a via in accordance with variousembodiments. In some embodiments the continuous electrode may connecttwo layers within the device obviating the need for a buried via. Inseveral embodiments, the continuous electrodes can replace blind viasand/or buried vias.

A microelectronic device with a bent electrode in accordance with anembodiment of the invention is shown in FIG. 3. The devices comprise asingle continuous electrode (10) that has a parallel portion within adielectric body (9). The metal conductor (10) is slightly bent to allowa continuous electrode to pass from the outside of the device to aninternal layer within the ceramic dielectric component without the useof a via. The device can be sintered to produce a monolithic component.The conductive surface of the metal conductor 10 can be directly bondedto an external circuit.

While structures for continuous and bent electrodes in microelectronicdevices are described above with reference to FIG. 3, any variety ofstructures that implement continuous electrodes that are bent to connectdifferent layers can be utilized in the design and fabrication ofmicroelectronic devices as appropriate to the requirements of specificapplications in accordance with various embodiments of the invention.Processes for manufacturing microelectronic devices in accordance withvarious embodiments of the invention are discussed further below.

Methods of Manufacturing Microelectronic Devices

Methods and processes in accordance with various embodiments of theinvention rely upon manufacturing microelectronic devices to have atleast one continuous electrode. As is discussed further below, any of avariety of manufacturing process can be utilized as appropriate to therequirements of specific applications in accordance with variousembodiments of the invention.

A method for manufacturing microelectronic devices with continuouselectrodes in accordance with an embodiment of the invention isillustrated in FIG. 4. The process 400 can begin casting ceramic sheets(401). Many embodiments are directed to embodiments that incorporatepre-fired dielectric substrates. In some embodiments, ceramic sheetshave dielectric properties. Exemplary ceramic dielectrics properties inthese embodiments include, but are not limited to, high Q, temperaturestable and high k dielectrics. Exemplary dielectrics in theseembodiments include, but are not limited to, P100, NPO, X7R, Y5V. Inseveral embodiments, ceramic sheets can be green tapes which refer toceramic materials that have not been fired. Examples of ceramic sheetsinclude but are not limited to Ferro A6M. Many embodiments providemicroelectronics and methods that implement the integration of multipledielectric types in a single device producing high frequency performancecharacteristics. The ceramic sheets are then blanked (402). Openings arepunched in some of the blanked ceramic sheets (403). Ceramic sheets aremetalized with a conductor material (404). In several embodiments,conductor pastes that are compatible to the dielectric material can beused for metalization process. Examples of compatible conductor to FerroA6M include (but are not limited to): Ferro CN30-080M gold paste. Someceramic sheets are not metalized (not shown). Metalized andnonmetallized ceramic sheets are then aligned and laminated (405).Careful location and design of the openings and positioning of themetalized patterns allows continuous conductors to be distorted from onelayer to one or more adjacent layers. In some embodiments the laminationpressure is sufficient to form a device with a flat top surface. In someembodiments, lamination is performed under isostatic pressure. Laminatedceramic sheets are sintered to form monolithic microelectronic devices(406). In several embodiments, sintering can include firing process. Inmany embodiments, once these layers are deposited and formed, they maythen be cured/fired, lapped as necessary to create the appropriatethickness and then topped by the required conductive layers to form thedevice. The sheet may then be diced (407) as necessary to form theindividual devices, for example electronic components and/or circuits. Amethod for manufacturing microelectronic devices with a continuouselectrode assembled from ceramic sheets in accordance with an embodimentof the invention is illustrated in FIG. 5.

Process 501 illustrates a number of layers of green ceramic sheets: baselayers of green ceramic sheets (5) are without metalization or openings,a layer of green ceramic sheet (6) with a metal conductor (7) printed ontop, and a top layer of green ceramic sheet with openings punched in (8)and no metal print. Process 502 shows the green ceramic sheets fromprocess 301 are carefully aligned and tacked to each other.

Process 503 illustrates that the stack of ceramic sheets from process502 is subjected to isostatic pressure to form a device with a flat topsurface. The metal conductor (10) is slightly deformed due to theplastic nature of the ceramic sheet. This allows a continuous electrodeto pass from the outside of the device to an internal layer within theceramic component. The device can now be sintered to produce amonolithic component. In such embodiments, the green ceramic sheets maybe formulated by dispersing ceramic powder into a polymer binder system.The stack of ceramic loaded sheets may undergo plastic deformation whensubjected to lamination conditions. Careful location and design of theopenings and positioning of the metalized patterns allows continuousconductors to be distorted from one layer to one or more adjacent layersin accordance to certain embodiments.

In certain embodiments, multiple microelectronic devices can bemanufactured on the same substrates. Once the ceramic sheets aredeposited and formed, they may then be cured/fired, lapped as necessaryto create the appropriate thickness and then topped by the requiredconductive layers to form the device. FIG. 6 illustrates multipledevices on the same substrate in accordance with an embodiment. Thesheet may be diced (a/b) as necessary to form the individual devices.

While methods for manufacturing continuous and bent electrodes inmicroelectronic devices are described above with reference to FIGS. 4-6,any variety of processes that fabricate continuous electrodes that arebent to connect different layers can be utilized in the design andfabrication of microelectronic devices as appropriate to therequirements of specific applications in accordance with variousembodiments of the invention.

Embodiments Implementing Microelectronic Devices

Apparatus in accordance with many embodiments of the invention rely uponcontinuous electrodes inside microelectronic devices that can formvarious electronic components. Although some device architectures areprovided and discussed below, it will be understood that using theelectrode structures according to embodiments in other devices may becontemplated. As is discussed further below, any of a variety ofmicroelectronic devices can be utilized as appropriate to therequirements of specific applications in accordance with variousembodiments of the invention.

Many embodiments include that more than one continuous electrode can beformed in a microelectronic device. Continuous electrodes in suchembodiments can form electronic components within the microelectronicdevices. Examples of microelectronic devices formed with continuouselectrode include (but are not limited to): capacitor, resistor,inductor, transformer, diode, conductors, ground-planes. Electroniccomponents in such embodiments can be connected in series, in parallel,or any combination of.

A microelectronic device with a bent electrode forming a capacitor inaccordance with an embodiment of the invention is shown in FIG. 7. Insome such embodiments, a ceramic body (101) contains a continuouselectrode (102) forming both a conductive pad on the external topsurface or first plane of the device and an embedded electrode in asecond plane within the device parallel to the first plane as shown in701 is provided. An additional electrode (103) is printed on the topsurface of the device and acts as an external pad and an electrode tocreate a simple capacitor. 702 represents a simplified circuit diagramof a capacitor as illustrated in 701.

A microelectronic device with two bent electrodes forming a capacitorinside in accordance with an embodiment of the invention is shown inFIG. 8. In some such embodiments, a ceramic body (104) contains twocontinuous electrodes (105, 106) as shown in 801 is provided. Eachcontinuous electrode has a conductive pad on the external top surface orfirst plane of the device and an embedded electrode in a second planewithin the device parallel to the first plane. The parallel continuouselectrodes 105 and 106 form a capacitor embedded within the device(104). Additional bent electrodes may be added to make more complexassemblies or arrays. 802 represents a simplified circuit diagram of acapacitor as illustrated in 801.

Many embodiments of the current invention provide microelectronics andmethods capable of combination with any other passive electroniccomponent such as a resistor or inductor further improving functionalityand reducing space requirements on the circuit. Several embodimentsprovide microelectronics and methods configured to be mounted to a shortblock or other device without the use of a through-via, simplifyingconnection to a circuit. In several embodiments, ceramic microelectronicdevices with continuous electrodes can be connected with at least oneexternal component. The external component can be any electronic circuitcomponent. Examples of external components include (but are not limitedto): capacitors, resistors, inductors, transformers, diodes,transistors, conductors, ground-planes.

A microelectronic device with two bent electrodes forming a capacitorinside and with an additional external component in accordance with anembodiment of the invention is shown in FIG. 9. In some suchembodiments, a ceramic body (107) contains two continuous electrodes(108, 109) as shown in 901 is provided. Each continuous electrode has aconductive pad on the external top surface or first plane of the deviceand an embedded electrode in a second plane within the device parallelto the first plane. The parallel continuous electrodes 108 and 109 forma capacitor embedded within the device. An additional external componentcan be applied to the surface (110) in connection with one or more ofthe electrodes. The external component could be a resistor or otherelectrical component. 902 represents a simplified circuit diagram of acapacitor connecting to an electrical component as illustrated in 901.

Many embodiments include at least one continuous electrode having anadditional print electrode on the surface of the microelectronic device.A microelectronic device with two bent electrodes and an additionalprint electrode forming a capacitor in accordance with an embodiment ofthe invention is shown in FIG. 10. In some such embodiments a ceramicbody (111) contains two continuous electrodes (112, 113) as shown in1001 is provided. Each continuous electrode has a conductive pad on theexternal top surface or first plane of the device and an embeddedelectrode in a second plane within the device parallel to the firstplane. The parallel continuous electrodes (112) and (113) are embeddedwithin the device. One of the continuous electrodes (113) has anadditional print electrode (113′) after stacking the top layer creatinga forked electrode. The forked electrode (113) and (113′) could interactwith a second continuous electrode (112) to create a more complexedcapacitor. 1002 represents a simplified circuit diagram of a capacitornetwork as illustrated in 1001.

In some embodiments, a conductive material can be applied to the side ofmicroelectronic devices as to terminate the conductive pathway and allowother internal electronic components or electrodes to connect with thebent electrodes. The side termination may allow more flexibility inmounting the device to an external circuit in another embodiments.

In many embodiments, a single layer capacitor using the bent electrodemay be provided in combination with a multi-layer capacitor. Devices ofsuch construction may find particular use in high frequency or broadbandcircuits in accordance with certain embodiments. Several embodiments areconfigured to provide inductances (at least for the lower capacitorportion) to be as low as possible. Using via connects in a deviceinherently add some inductance hence removing the via in accordance withembodiments is particularly advantageous in high frequency applications.Moreover, in some embodiments, by positioning a bent electrode capacitorat the bottom of the device can eliminate the need for wire bonds (againreducing inductance). There is also a performance advantage in having acapacitor positioned as close to the ground plane of the circuit aspossible in accordance with such embodiments.

A microelectronic device with a single layer capacitor and a multi-layercapacitor inside a ceramic body with side termination in accordance withan embodiment of the invention is shown in FIG. 11. In some suchembodiments, a ceramic body (114) contains a continuous electrode (115)forming both a conductive pad on the external top surface or first planeof the device and an embedded electrode in a second plane within thedevice parallel to the first plane as shown in 1101 is provided. Anelectrode (116) is printed on the top surface of the device and acts asan external pad and an electrode to create a simple capacitor. Anexternal conductive ‘termination’ (118) can be applied to the device toallow other internal components or electrodes to connect with the bentelectrode. In this case a multi-layer capacitor (117) can be combined inparallel with a simple single-layer capacitor. These terminations canalso allow more flexibility in mounting the device to an externalcircuit using solder attach. 1102 represents a simplified circuitdiagram of two capacitors in parallel as illustrated in 1101.

In many embodiments continuous electrodes can be disposed on both sidesof ceramic microelectronic devices. Being able to make bent electrodeson both sides of the device can negate the need to orient the device andprovide redundant circuitry and/or add an additional electroniccomponent to the same device.

A microelectronic device where both the top surface and bottom surfacecontain components formed using the bent electrodes in accordance withan embodiment of the invention is shown in FIG. 12. In many suchembodiments, a ceramic body (119) contains a continuous electrode (120)on the top surface forming both a conductive pad on the external topsurface or first plane of the device and an embedded electrode in asecond plane within the device parallel to the first plane as shown in1201 is provided. An electrode (121) is printed on the top surface ofthe device and acts as an external pad and an electrode to create asimple capacitor. A continuous electrode (122) on the bottom surfaceforming both a conductive pad on the external top surface or third planeof the device and an embedded electrode in a fourth plane within thedevice parallel to the third plane. An electrode (123) is printed on thebottom surface of the device and acts as an external pad and anelectrode to create a capacitor. 1202 represents a simplified circuitdiagram of two capacitors with separate electrical connections asillustrated in 1201.

Various embodiments are configured such that the continuous electrodescan start on opposing surfaces of the device, which makes it possible tofabricate variable electronic components structures within themicroelectronic devices. A microelectronic device with two bentelectrodes on opposing surfaces forming a capacitor in accordance withan embodiment of the invention is shown in FIG. 13. In some suchembodiments, a ceramic body (124) contains two continuous electrodes(125, 126) as shown in 1301 is provided. One continuous electrode (125)has a conductive pad on the external top surface or first plane of thedevice and an embedded electrode in a second plane within the deviceparallel to the first plane. One continuous electrode (126) has aconductive pad on the external bottom surface or third plane of thedevice and an embedded electrode in a fourth plane within the deviceparallel to the third plane. The parallel continuous electrodes (125)and (126) form a capacitor embedded within the ceramic body (124). 1302represents a simplified circuit diagram of a capacitor as illustrated in1301.

Some embodiments implement continuous electrodes with multiple bendsthat can penetrate deeper into the dielectric device. A microelectronicdevice with multiple bent electrodes on opposing surfaces forming acapacitor in accordance with an embodiment of the invention is shown inFIG. 14. In some such embodiments, a ceramic body (127) contains twocontinuous electrodes (128, 129) with multiple bends as shown in 1401 isprovided. One continuous electrode (128) has a conductive pad on theexternal top surface or first plane of the device, an embedded electrodein a second plane within the device parallel to the first plane, and anembedded electrode in a third plane within the device parallel to thefirst and second plane. One continuous electrode (129) has a conductivepad on the external bottom surface or fourth plane of the device, anembedded electrode in a fifth plane within the device parallel to thefourth plane, and an embedded electrode in a sixth plane within thedevice parallel to the fourth and fifth plane. The parallel continuouselectrodes (128) and (129) form a capacitor penetrating deeper andfurther within the ceramic body (127). 1402 represents a circuit diagramof a capacitor as illustrated in 1401.

Due to the relatively flat surface topography, additional components canbe easily added to the surface of the microelectronic devices inaccordance to several embodiments. In some embodiments, a thick filmresistor could be printed on the surface of the device between the twoexposed parts of the conductor to create a RC circuit. In variousembodiments, thick film and/or thin film components could be added tomicroelectronic devices to create more complex hybrid circuits. Someadditional components may have more challenging connection requirements.These additional components could be buried inside the device or on thesurface in accordance with some embodiments. Many embodiments includethat by positioning the conductors and openings in different locationsand on different layers within the device, fairly complex circuits canbe obtained. Multiple inductors, resistors, capacitors, transformers,conductors, ground-planes can be in series, parallel or series/parallelconfiguration in a number of embodiments.

In various embodiments, continuous electrodes are able to bend insideceramic body and back to the surface and create a tunnel connecting acomponent on the surface of the microelectronic device. The componentcan be a spiral inductor in certain embodiments. The inductor can beprinted on the top surface and/or internally within the ceramic body insome embodiments. A microelectronic device with bent electrodesproducing a chip inductor in accordance with an embodiment of theinvention is shown in FIG. 15. In some such embodiments, a device withan electrode (131) that bends inside the ceramic body (130) and backagain to the top surface creating a tunnel bypassing a component (133)on the top surface of the device is provided. In this case the componentcould be a spiral inductor with the outside of the spiral conductorbeing connected to a pad (132) at one edge of the device and the centerof the inductor being connected to a pad at the other edge of the deviceby the continuous electrode containing the double bend (131). FIG. 16illustrates another view of the device described in FIG. 15 showing thetop surface of the device, spiral inductor (113) and right-side pad(132) and the left side pad created by the bent conductor (131).

A microelectronic device forming a capacitor with continuous electrodesconnecting an electronic component in accordance with an embodiment ofthe invention is shown in FIG. 17. In some such embodiments, a devicewith an electrode (134) that bends inside the ceramic body (137) andback again to the top surface creating a tunnel bypassing a component(135) on the top surface of the device is provided. The continuouselectrode (134) has an additional bent electrode (134′) parallel to thetop surface creating a forked electrode. A second continuous electrode(136) is embedded inside the ceramic body (137) and is parallel to theforked electrode (134′). The forked electrode (134′) could react with asecond continuous electrode (136) to create a capacitor. In some cases,component (135) can be a surface printed inductor that has a coil shapewith one termination at the outside edge of the pattern and one at thecenter of the coil. This can be accommodated by adding an additionalconductor 134 within the device, exposed at a suitable location forconnection to the inductor coil.

In several embodiments, mounting to an external circuit may be madeeasier by terminating the ends of the device with a conductive paste. Insome embodiments, both top and bottom surfaces of the device may be usedfor additional or duplicate components to be included. A microelectronicdevice with continuous electrodes on both sides of the device and oneelectrode connecting an electronic component in accordance with anembodiment of the invention is shown in FIG. 18. In some suchembodiments a device with an electrode (138) that bends inside theceramic body (141) and back again to the top surface creating a tunnelbypassing a component (139) on the top surface of the device isprovided. The outside component is connected to a pad (140) at one edgeof the device and the center of the component is connected to a pad atthe other edge of the device by the continuous electrode containing thedouble bend (138). Side termination (142) on both sides ofmicroelectronic devices are added to enable other internal electroniccomponents and/or electrodes to connect with the bent electrodes. Acapacitor (143) formed with bent electrodes inside ceramic body (141) islocated on the opposite side of the microelectronic device.

In some embodiments, an electronic component can be printed on the topsurface or internally within the ceramic body. Mounting to an externalcircuit may be made easier by terminating the ends of the device with aconductive paste in accordance with several embodiments. Amicroelectronic device with bent electrode connecting an outsideelectronic component and side termination in accordance with anembodiment of the invention is shown in FIG. 19A. In some suchembodiments, a device with an electrode (144) that bends inside theceramic body (147) and back again to the top surface creating a tunnelbypassing a component (145) on the top surface of the device isprovided. The outside component is connected to a pad (146) at one edgeof the device and the center of the component is connected to a pad atthe other edge of the device by the continuous electrode containing thedouble bend (144). Side termination (148) on both sides ofmicroelectronic devices are added to enable other internal electroniccomponents or electrodes to connect with the bent electrodes.

In various embodiments, castellation mounting holes can be added tomicroelectronic devices to allow for connection to further structureswithin the devices. Castellation that can be mounted to the side ofmicroelectronic devices in accordance with an embodiment of theinvention is shown in FIG. 19B. A castellation hole (148) allows for theconnection to further structures within the device such as a multi-layerceramic capacitor.

A microelectronic device with side termination and/or castellation thatallows for connection to a multi-layer capacitor in accordance with anembodiment of the invention is shown in FIG. 20. In some suchembodiments, a device with an electrode (171) that bends inside theceramic body (170) and back again to the top surface creating a tunnelbypassing a component (173) on the top surface of the device isprovided. The outside component is connected to a pad (172) at one edgeof the device and the center of the component is connected to a pad atthe other edge of the device by the continuous electrode containing thedouble bend (171). Side termination and/or castellation (174) on bothsides of microelectronic devices are added to enable other internalelectronic components to connect with the bent electrodes. A multilayercapacitor (175) formed inside ceramic body (170) is located on theopposite side of the microelectronic device.

In many embodiments, bent electrodes may also be used on a ceramicsubstrate acting as a circuit substrate where via technology wouldnormally be used to connect devices together and/or to signal lines,voltage supply and ground strips. In some embodiments, surface mountdevices can be soldered, die bonded or attached using wire bonds. Amicroelectronic device with bent electrodes bypassing an electroniccomponent in accordance with an embodiment of the invention is shown inFIG. 21. In some such embodiments, a device with a ceramic circuit board(150) is provided. A continuous conductor with two bends (153) allows anelectrical connection between pads (151) and (152). The continuousconductor (153) is bypassing another component on the board (154).

A microelectronic device with bent electrodes bypassing an electroniccomponent in a different construction in accordance with an embodimentof the invention is shown in FIG. 22. In some such embodiments, a devicewith a ceramic circuit board (155) is provided. A continuous conductorwith two bends (158) allows an electrical connection between pads (156)and (156′). The continuous conductor (158) is connecting with an outsidecomponent (159) between pad (156′) and an outside pad (157). Thecontinuous conductor (158) is bypassing another outside component on theboard (159′) due to the tunnel formed by the bent electrode.

In some embodiments, bent electrodes would also allow passive devicessuch as decoupling capacitors to be easily buried in the ceramicsubstrate. A microelectronic device with bent electrodes forming adecoupling capacitor when connecting with an outside electroniccomponent in accordance with an embodiment of the invention is shown inFIG. 23. In some such embodiments, a device with a ceramic circuit board(160) is provided. A component (161) is mounted to the circuit by asimple conductive trace (162) on one side. A continuous conductor (163)forms both a pad for the other connection to the component and extendsinto the circuit board some distance. A second bent continuous electrode(164) forms both an external conductive pad and also extends into thecircuit board some distance. Overlapping the first bent electrode (163)and the second bent electrode (164) by some distance (165), whichcreates a decoupling capacitor.

In several embodiments, microelectronic devices can be wire bonded,solder attached and/or die bonded to connect to outside circuits. Thecontinuous electrodes may eliminate the risk of electrical failure dueto poor connection of via to electrode. Many embodiments include thatsince the conductive pads as part of the continuous electrodes have notopography associate with an underlying via and as such are ideal forwire bonding, solder attachment, and/or die bonding. FIG. 24Aillustrates a microelectronic device with continuous electrodes that canbe wire bonded with an external circuit in accordance with anembodiment. In some such embodiments, a device with bent electrode (13)is deposited on a substrate (10) is provided. The contact pads (17) onthe surface of the device can be wire bonded (12) to external contactpads located on the substrate (10). Alternatively, the contact pads (17)can be die bonded (11) to external contact pads. FIG. 24B illustrates amicroelectronic device with continuous electrodes that can be solderattached and die attached with an external circuit in accordance with anembodiment of the invention. In some such embodiments, a device withbent electrodes on the bottom side (14) can be connected with outsidecontact pads via solder attachment (16) and/or die bonding (15) isprovided.

Although the capacitors in accordance with many embodiments mayincorporate any suitable combination of dielectric material andconductive material, in various embodiments, exemplary dielectricsinclude, but are not limited to, P100, NPO, X7R, YSV, among others.Similarly, any suitable conductive material may be incorporated,including, for example, any compatible metallization material. Inaddition, as discussed above, these dielectric and conductive layers maybe provided in any thickness suitable to provide the desiredcapacitance. In various embodiments, the minimum thickness of thesubstrates is only limited by the particle size of the ceramic materialused and the ability to disperse this ceramic into a polymer bindersystem. In some embodiments, the limiting factor to the thinness of thedielectric layer would be voltage breakdown and possibly arcing betweenthe conductors.

Although specific embodiments of microelectronic devices are describedherein, it will be understood that many alternative embodiments may bemade that incorporate the capabilities described herein, and/or may bemade in accordance with methods of manufacture.

Doctrine of Equivalents

This description of the invention has been presented for the purposes ofillustration and description. It is not intended to be exhaustive or tolimit the invention to the precise form described, and manymodifications and variations are possible in light of the teachingabove. The embodiments were chosen and described in order to bestexplain the principles of the invention and its practical applications.This description will enable others skilled in the art to best utilizeand practice the invention in various embodiments and with variousmodifications as are suited to a particular use. The scope of theinvention is defined by the following claims.

1. A microelectronic device comprising: a dielectric body; at least afirst conductive layer having at least a first portion embedded withinthe dielectric body and extending across at least a portion of thedielectric body along a first plane within the dielectric body such aportion of the dielectric material forming the dielectric body coverssaid first portion, and a second portion continuously interconnectedwith the first portion, the second portion is in a second plane parallelto the first plane, wherein the second portion is either exposed to atop surface of the dielectric body or embedded within the dielectricbody.
 2. The microelectronic device of claim 1, further comprising: atleast a second conductive layer on the top surface of the dielectricbody parallel to the first plane of the first conductive layer, suchthat a layer of dielectric material is disposed therebetween and definesa dielectric thickness.
 3. The microelectronic device of claim 1,further comprising: at least a second conductive layer having at least afirst portion embedded within the dielectric body and extending acrossat least a portion of the dielectric body along a first plane within thedielectric body such a portion of the dielectric material forming thedielectric body covers said first portion, and a second portioncontinuously interconnected with the first portion, the second portionbeing exposed to the top surface of the dielectric body in a secondplane parallel to the first plane; and wherein the first planes of thefirst conductive layer and second conductive layer are disposed parallelto each other within the dielectric body such that a layer of dielectricmaterial is disposed therebetween and defines a dielectric thickness. 4.The microelectronic device of claim 3, further comprising: at least anelectronic component on the top surface of the dielectric body,connecting with the microelectronic device with the second portion ofthe first conductive layer and the second portion of the secondconductive layer.
 5. The microelectronic device of claim 3, furthercomprising: at least a third conductive layer on the top surface of thedielectric body parallel to the first portion of the first conductivelayer and the first portion of the second conductive layer, wherein thethird conductive layer overlaps with the second portion of the firstconductive layer such that a layer of dielectric material is disposedbetween the first portions of the first conductive layer and the secondconductive layer and define a first dielectric thickness, and a layer ofdielectric material is disposed between the first portion of the secondconductive layer and the third conductive layer and define a seconddielectric thickness.
 6. The microelectronic device of claim 2 or 3,further comprising: a conductive paste deposited at a left side and aright side of the microelectronic device, wherein the conductive pasteoverlaps partially with the top surface and a bottom surface of thedielectric body, wherein the bottom surface is opposite to the topsurface.
 7. The microelectronic device of claim 6, further comprising:at least a third conductive layer embedded within the dielectric bodyand extending along a first plane within the dielectric body andparallel to the first portion of the first conductive layer; at least afourth conductive layer embedded within the dielectric body andextending along a first plane within the dielectric body and parallel tothe first portion of the first conductive layer; wherein the third andthe fourth conductive layers are disposed parallel to each other withinthe dielectric body such that a layer of dielectric material is disposedtherebetween and defines a dielectric thickness; and wherein theconductive layers are connected by the conductive paste.
 8. Themicroelectronic device of claim 2, further comprising: at least a thirdconductive layer having at least a first portion embedded within thedielectric body and extending across at least a portion of thedielectric body along a first plane within the dielectric body such aportion of the dielectric material forming the dielectric body coverssaid first portion, and a second portion continuously interconnectedwith the first portion, the second portion being exposed to a bottomsurface of the dielectric body in a second plane parallel to the firstplane, wherein the bottom surface is opposite to the top surface; and atleast a fourth conductive layer on the bottom surface of the dielectricbody parallel to the first plane of the third conductive layer, suchthat a layer of dielectric material is disposed therebetween and definesa dielectric thickness.
 9. The microelectronic device of claim 3,further comprising: at least a third conductive layer having at least afirst portion embedded within the dielectric body and extending acrossat least a portion of the dielectric body along a first plane within thedielectric body such a portion of the dielectric material forming thedielectric body covers said first portion, and a second portioncontinuously interconnected with the first portion, the second portionbeing exposed to a bottom surface of the dielectric body in a secondplane parallel to the first plane, wherein the bottom surface isopposite to the top surface; at least a fourth conductive layer havingat least a first portion embedded within the dielectric body andextending across at least a portion of the dielectric body along a firstplane within the dielectric body such a portion of the dielectricmaterial forming the dielectric body covers said first portion, and asecond portion continuously interconnected with the first portion, thesecond portion being exposed to the bottom surface of the dielectricbody in a second plane parallel to the first plane; and wherein thefirst planes of the third conductive layer and fourth conductive layerare disposed parallel to each other within the dielectric body such thata layer of dielectric material is disposed therebetween and defines adielectric thickness.
 10. The microelectronic device of claim 1, furthercomprising: at least a second conductive layer having at least a firstportion embedded within the dielectric body and extending across atleast a portion of the dielectric body along a first plane within thedielectric body such a portion of the dielectric material forming thedielectric body covers said first portion, and a second portioncontinuously interconnected with the first portion, the second portionbeing exposed to a bottom surface of the dielectric body in a secondplane parallel to the first plane, and a third portion continuouslyinterconnected with the first portion and embedded within the dielectricbody and extending across at least a portion of the dielectric bodyalong a third plane within the dielectric body such a portion of thedielectric material forming the dielectric body covers said the thirdportion, wherein the bottom surface is opposite to the top surface; andwherein the first portion of the first conductive layer and the thirdportion of the second conductive layer are disposed parallel to eachother within the dielectric body such that a layer of dielectricmaterial is disposed between the first portion of the first conductivelayer and third portion of the second conductive layer and defines afirst dielectric thickness, and the first and third portions of thesecond conductive layer are disposed parallel to each other within thedielectric body such that a layer of dielectric material is disposedbetween the first and third portions of the second conductive layer anddefines a second dielectric thickness.
 11. The microelectronic device ofclaim 1, further comprising: at least a third portion of the firstconductive layer continuously interconnected with the first portion andembedded within the dielectric body and extending across at least aportion of the dielectric body along a third plane within the dielectricbody such a portion of the dielectric material forming the dielectricbody covers said the third portion; at least a second conductive layerhaving at least a first portion embedded within the dielectric body andextending across at least a portion of the dielectric body along a firstplane within the dielectric body such a portion of the dielectricmaterial forming the dielectric body covers said first portion, and asecond portion continuously interconnected with the first portion, thesecond portion being exposed to a bottom surface of the dielectric bodyin a second plane parallel to the first plane, and a third portioncontinuously interconnected with the first portion and embedded withinthe dielectric body and extending across at least a portion of thedielectric body along a third plane within the dielectric body such aportion of the dielectric material forming the dielectric body coverssaid the third portion, wherein the bottom surface is opposite to thetop surface; and wherein the first and third portions of the firstconductive layer are disposed parallel to each other within thedielectric body such that a layer of dielectric material is disposedbetween the first and third portions of the first conductive layer anddefines a first dielectric thickness, and the first and third portionsof the second conductive layer are disposed parallel to each otherwithin the dielectric body such that a layer of dielectric material isdisposed between the first and third portions of the second conductivelayer and defines a second dielectric thickness, and the third portionsof the first conductive layer and the second conductive layer aredisposed parallel to each other within the dielectric body such that alayer of dielectric material is disposed between the third portions ofthe first conductive layer and the second conductive layer and defines athird dielectric thickness.
 12. The microelectronic device of claim 1,further comprising: at least a third portion of the first conductivelayer continuously interconnected with the first portion, the thirdportion being exposed to the top surface of the dielectric body in thesecond plane.
 13. The microelectronic device of claim 12, furthercomprising: at least a second conductive layer on the top surface of thedielectric body, such that the second and third portions of the firstconductive layer and the second conductive layer are on the same topsurface; wherein an electronic component is deposited on the top surfaceof the dielectric body and connected with the third portion of the firstconductive layer and the second conductive layer.
 14. Themicroelectronic device of claim 13, wherein the electronic component isan inductor.
 15. The microelectronic device of claim 12, furthercomprising: at least a second and a third conductive layer on the topsurface of the dielectric body, such that the second and third portionsof the first conductive layer and the second and third conductive layersare on the same top surface; wherein an electronic component isdeposited on the top surface of the dielectric body and connected withthe second and third conductive layers.
 16. The microelectronic deviceof claim 3, further comprising: at least a third conductive layer on thetop surface of the dielectric body, such that the second portions of thefirst and the second conductive layers and the third conductive layerare on the same top surface; wherein an electronic component isdeposited on the top surface of the dielectric body and connected withthe second portion of the first conductive layer and the thirdconductive layer.
 17. The microelectronic device of claim 3, wherein thesecond portions of the first and second conductive layers areindependently wire-bonded to a portion of a circuit.
 18. Themicroelectronic device of claim 1, wherein at least the dielectric bodyis formed of a material selected from the group consisting of P100, NPO,X7R and Y5V dielectric materials.
 19. A method of manufacturing amicroelectronic device comprising: casting a sheet of a dielectricsubstrate having first and second surfaces; forming openings in thedielectric substrate; applying a plurality of conductive layers to thesheets of the dielectric substrate; aligning the sheets of thedielectric substrate such that at least a first conductive layer has atleast a first portion embedded within the dielectric material andextending across at least a portion of the dielectric body along a firstplane within the dielectric body such a portion of the dielectricmaterial forming the dielectric body covers said first portion, and asecond portion continuously interconnected with the first portion, thesecond portion is in a second plane parallel to the first plane, whereinthe second portion is either exposed to a top surface of the dielectricbody or embedded within the dielectric body; laminating the alignedsheets together; dicing the sheets into singulated devices; andsintering the devices.
 20. The method of claim 19, wherein firing maycomprise one of either curing or firing.
 21. The method of claim 19,wherein the firing is performed prior to dicing.